The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Sep. 29, 2022
Xiamen Sanan Optoelectronics Co., Ltd., Xiamen, CN;
Qing Wang, Xiamen, CN;
Quanyang MA, Xiamen, CN;
Jiangbin Zeng, Xiamen, CN;
Dazhong Chen, Xiamen, CN;
Ling-Yuan Hong, Xiamen, CN;
Kang-Wei Peng, Xiamen, CN;
Su-Hui Lin, Xiamen, CN;
XIAMEN SANAN OPTOELECTRONICS CO., LTD., Xiamen, CN;
Abstract
A light-emitting device includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack includes a light-emitting layer. The DBR structure is disposed on the semiconductor light-emitting stack and includes a plurality of first dielectric material layers and a plurality of second dielectric material layers that are alternately stacked on the semiconductor light-emitting stack. The first dielectric material layer has a first refractive index, and the second dielectric material layer has a second refractive index. The first refractive index is lower than the second refractive index. The second dielectric material layer has an optical thickness that is smaller than that of the first dielectric material layer.