The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Jun. 09, 2023
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Toshiya Endo, Atsugi, JP;

Ryota Hodo, Atsugi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 99/00 (2025.01);
Abstract

To manufacture a semiconductor device by a method including the steps of: forming an oxide over a substrate, a first conductor over the oxide, and a second conductor over the first conductor; forming a first insulator to cover the oxide, the first conductor, and the second conductor; forming an opening in the first insulator to divide the second conductor into a third conductor and a fourth conductor; forming a second insulator and a third insulator to cover the oxide and the first insulator; processing the second insulator and the third insulator into a fourth insulator and a fifth insulator; processing the first conductor using the fourth insulator and the fifth insulator as a mask to divide the first conductor into a fifth conductor and a sixth conductor; and removing the fifth insulator.


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