The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Apr. 09, 2021
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Yuto Yakubo, Atsugi, JP;
Shoki Miyata, Atsugi, JP;
Akio Suzuki, Atsugi, JP;
Takayuki Ikeda, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device with a novel structure is provided. The semiconductor device includes a current-to-voltage conversion portion, a current switch portion, a voltage-to-current conversion portion, and a control portion. The current switch portion includes a first transistor. The voltage-to-current conversion portion includes a second transistor. The control portion includes a third transistor. The first transistor includes an oxide semiconductor in a channel formation region. The second transistor includes a nitride semiconductor in a channel formation region. The third transistor includes silicon in a channel formation region. The first transistor is provided over a first substrate. The second transistor and the third transistor are provided over a second substrate.