The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Mar. 29, 2023
Xiamen Tianma Display Technology Co., Ltd., Xiamen, CN;
Kazushige Takechi, Kawasaki, JP;
XIAMEN TIANMA DISPLAY TECHNOLOGY CO., LTD., Xiamen, CN;
Abstract
An oxide semiconductor TFT device includes a substrate and a first oxide semiconductor TFT on the substrate. The first oxide semiconductor TFT includes a first oxide semiconductor layer, a first top-gate electrode, and a first source/drain electrode. The first oxide semiconductor layer includes a first channel region overlapping the first top-gate electrode, and two first low-resistive regions sandwiching the first channel region. The first source/drain electrode is located upper than the first top-gate electrode and extends through an insulating region overlapping one of the two first low-resistive regions to be in contact with the one of the two first low-resistive regions. Each of the two first low-resistive regions and the first channel region includes a lower amorphous layer and an upper crystalline layer having a composition identical to a composition of the amorphous layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile