The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Dec. 01, 2022
Applicant:

Magnolia White Corporation, Tokyo, JP;

Inventors:

Hiroki Sugiyama, Tokyo, JP;

Hiroshi Inamura, Tokyo, JP;

Kaoru Taketa, Tokyo, JP;

Yoshihide Ohue, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); H10D 30/67 (2025.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); G06V 40/13 (2022.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); G02F 1/136227 (2013.01); G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); H10D 30/6755 (2025.01); H10D 86/021 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); G06V 40/1318 (2022.01);
Abstract

A TFT substrate includes a substrate, a plurality of transistors provided on the substrate and each including an oxide semiconductor layer, a plurality of scanning lines electrically coupled to gates of the transistors and extending in a first direction, a plurality of signal lines electrically coupled to the oxide semiconductor layers of the transistors and extending in a second direction intersecting the first direction, an insulating film covering the signal lines and the oxide semiconductor layers, and a coupling wire provided on the insulating film. At least one of the signal lines is separated in the second direction by a slit, and the coupling wire electrically couples one signal line and another signal line adjacent to each other in the second direction across the slit.


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