The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
May. 02, 2023
Xiamen Tianma Display Technology Co., Ltd., Xiamen, CN;
Kazushige Takechi, Kanagawa, JP;
Genshiro Kawachi, Kanagawa, JP;
XIAMEN TIANMA DISPLAY TECHNOLOGY CO., LTD., Xiamen, CN;
Abstract
A thin-film transistor device is disclosed. A first semiconductor layer includes a first channel region and first source/drain regions sandwiching the first channel region. A second semiconductor layer includes a second channel region and second source/drain regions sandwiching the second channel region. A metal contact region is located in a hole extending through one or more upper insulating layers and one or more lower insulating layers and in contact with one of the first source/drain regions and one of the second source/drain regions. A diameter of the hole at the lowermost layer in the one or more upper insulating layers is larger than a diameter of the hole at the uppermost layer in the one or more lower insulating layers. The metal contact region is made of the same metal material as source/drain lines of the first thin-film transistor and the second thin-film transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile