The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Oct. 22, 2021
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Hehe Hu, Beijing, CN;
Fengjuan Liu, Beijing, CN;
Guangcai Yuan, Beijing, CN;
Jiayu He, Beijing, CN;
Ce Ning, Beijing, CN;
Zhengliang Li, Beijing, CN;
Kun Zhao, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/17 (2025.01); H01L 21/385 (2006.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 62/299 (2025.01); H01L 21/385 (2013.01); H10D 30/6755 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01);
Abstract
Provided is a method for manufacturing a metal-oxide thin-film transistor (TFT). The method includes: forming, on a base substrate, an active layer including a metal oxide semiconductor, and a functional layer laminated on the active layer and containing a lanthanide element; and annealing the active layer and the functional layer, such that the lanthanide element in the functional layer is diffused into the active layer.