The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Apr. 17, 2020
Infineon Technologies Ag, Neubiberg, DE;
Gerhard Schmidt, Wernberg-Wudmath, AT;
Elmar Falck, Hohenbrunn, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes: a semiconductor body with an edge region arranged between an inner region and an edge surface; a first semiconductor region of a first doping type in the inner region; and a second semiconductor region of a second doping type in the inner and edge regions. An edge termination structure includes: a third semiconductor region in the edge region adjoining the first semiconductor region; a surface section of the second semiconductor region adjoining a first main surface of the semiconductor body; and an amorphous passivation layer having a specific resistance higher than 10Ωcm adjoining the third semiconductor region and the surface section. An electrically active doping dose of the third region at a lateral position spaced apart from the first region by 50% of a width of the edge termination structure is at least Q/q, wherein Qis breakdown charge and q is elementary charge.