The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Aug. 25, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yusuke Kasahara, Yokkaichi Mie, JP;

Kappei Imamura, Kuwana Mie, JP;

Akifumi Gawase, Kuwana Mie, JP;

Shinji Mori, Nagoya Aichi, JP;

Akihiro Kajita, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 12/00 (2006.01); H10B 12/00 (2023.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); H10B 12/05 (2023.02); H10B 12/33 (2023.02); H10D 30/6728 (2025.01); H10D 30/6729 (2025.01); H10D 30/6755 (2025.01);
Abstract

According to one embodiment, a semiconductor device includes a first conductive layer between first and second insulating layers with an oxide semiconductor column extending in the first direction through these layers. A third insulating layer covers the column. The column has a first semiconductor portion at a first position matching the first insulating layer, a second semiconductor portion at a second position matching second insulating layer, and a third semiconductor portion at a third position matching the first conductive layer. The first semiconductor portion is continuous along a second direction between the third insulating layer, the second semiconductor portion is continuous along the second direction between the third insulating layer, but the third semiconductor portion is not continuous between the third insulating layer.


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