The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Sep. 20, 2023
Renesas Electronics Corporation, Tokyo, JP;
Nao Nagata, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
An IGBT includes first and second trenches arranged side by side on a front surface of a semiconductor substrate, a collector region formed on a back surface side of the semiconductor substrate, a body region and an emitter region provided between the first and second trenches, a first trench gate electrode provided in the first trench, a second trench gate electrode provided in the second trench, a third trench gate electrode provided below the first trench gate electrode in the first trench, a fourth trench gate electrode provided below the second trench gate electrode in the second trench, and a floating region formed in the semiconductor substrate with the first and second trenches interposed therebetween.