The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Nov. 19, 2021
Applicant:

Suzhou Oriental Semiconductor Co., Ltd., Jiangsu, CN;

Inventors:

Yi Gong, Jiangsu, CN;

Wei Liu, Jiangsu, CN;

Lei Liu, Jiangsu, CN;

Rui Wang, Jiangsu, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 12/441 (2025.01); H10D 62/10 (2025.01); H10D 62/127 (2025.01);
Abstract

Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate and p-type body regions are disposed at a top of the semiconductor substrate. The p-type body regions are in contact with an emitter metal layer. The semiconductor substrate includes at least one first region, and a region of the semiconductor substrate outside the at least one first region is a second region. Each of p-type body regions in the at least one first region is provided with a first p-type body region contact region, and the emitter metal layer is in contact with the first p-type body region contact region and forms an ohmic contact with the first p-type body region contact region. Each of p-type body regions in the second region forms no ohmic contact with the emitter metal layer.


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