The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Feb. 28, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyu Dong Park, Suwon-si, KR;

Jong Hyun Paek, Suwon-si, KR;

Seul Ji Song, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10B 63/10 (2023.01);
U.S. Cl.
CPC ...
H10B 63/80 (2023.02); H10B 63/10 (2023.02);
Abstract

A semiconductor memory device comprises a substrate, a first conductive line extending in a first direction on the substrate, a second conductive line extending in a second direction on the first conductive line, a memory cell between the first and the second conductive lines, and a spacer covering a part of a side wall of the memory cell, wherein the memory cell includes a first electrode connected to the first conductive line, a second electrode connected to the second conductive line, and an information storage pattern between the first and second electrodes, wherein the spacer covers a side wall of the information storage pattern and a side wall of the second electrode, but not side walls of the first electrode, and the first electrode is wider than the information storage pattern at a portion on which the first electrode and the information storage pattern contact to each other.


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Quick Actions:

Park, Kyu. (2026). Semiconductor memory devices (U.S. Patent No. 12581660). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12581660

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