The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Mar. 31, 2022
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Sung Hyun Yoon, Icheon-si, KR;

Dae Hyun Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/16 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H10B 51/30 (2023.02);
Abstract

A ferroelectric memory device includes interlayer insulating layers and gate lines alternately stacked, a data storage layer vertically passing through the interlayer insulating layers and the gate lines and having a cylindrical shape, and a channel layer formed in an area enclosed by the data storage layer. The data storage layer includes a first ferroelectric layer abutting on the channel layer, a second ferroelectric layer abutting on the interlayer insulating layers and the gate lines, and an interface layer formed between the first and the second ferroelectric layers.


Find Patent Forward Citations

Quick Actions:

Yoon, Sung. (2026). Ferroelectric memory with multiple ferroelectric layers through a stack of gate lines (U.S. Patent No. 12581658). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12581658

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…