The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Sep. 08, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Junhyoung Kim, Suwon-si, KR;
Joonyoung Kwon, Suwon-si, KR;
Jiyoung Kim, Suwon-si, KR;
Jinhyuk Kim, Suwon-si, KR;
Sukkang Sung, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes a gate electrode structure, a first division pattern, and a memory channel structure. The gate electrode structure includes gate electrodes stacked in a first direction and extending in a second direction. The first division pattern extends in the second direction through the gate electrode structure, and divides the gate electrode structure in a third direction. The memory channel structure extends through the gate electrode structure, and includes a channel and a charge storage structure. The first division pattern includes first and second sidewalls opposite to each other in the third direction. First recesses are spaced apart from each other in the second direction on the first sidewall, and second recesses are spaced apart from each other in the second direction on the second sidewall. The first and second recesses do not overlap in the third direction.