Non-volatile memory devices and electronic systems including the same

Abstract

A non-volatile memory device comprises a substrate, a mold structure that includes gate electrodes stacked on the substrate and mold insulating layers alternately stacked with the gate electrodes, a cell contact on the substrate, wherein the cell contact is electrically connected to a selection gate electrode of the gate electrodes and is not electrically connected to a non-selection gate electrode of the gate electrodes, an insulating ring on the substrate, wherein the insulating ring is between the non-selection gate electrode and a sidewall of the cell contact and is in contact with the non-selection gate electrode, and a high dielectric constant layer between respective ones of the gate electrodes and the mold insulating layers, wherein the insulating ring includes a first portion that overlaps the high dielectric constant layer in a vertical direction, and a second portion that does not overlap the high dielectric constant layer in the vertical direction.