The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Mar. 19, 2020
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/026 (2006.01); H01S 5/0234 (2021.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/0237 (2021.01);
U.S. Cl.
CPC ...
H01S 5/0234 (2021.01); H01S 5/0265 (2013.01); H01S 5/04256 (2019.08); H01S 5/04257 (2019.08); H01S 5/0427 (2013.01); H01S 5/2202 (2013.01); H01S 5/0237 (2021.01); H01S 5/2213 (2013.01);
Abstract
This optical semiconductor element includes: a substrate; a first ridge formed on the substrate and having a first first-conductivity-type cladding layer, a first core layer, a first second-conductivity-type cladding layer, and a first contact layer in this order from a lower side, with first ridge grooves provided on both lateral sides of the first ridge; and a first electrode formed in contact with the first contact layer, on the first ridge, without spreading to the first ridge grooves, the first electrode including a first solder layer.