The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Aug. 05, 2024
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jun Hyun Park, Yongin-si, KR;

Young Wan Seo, Yongin-si, KR;

Assignee:

Samsung Display Co., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/121 (2023.01); G09G 3/3266 (2016.01); G09G 3/3291 (2016.01); H10K 59/12 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); G06F 3/041 (2006.01); G06F 3/044 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3291 (2013.01); G09G 3/3266 (2013.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/126 (2023.02); H10K 59/131 (2023.02); G06F 3/0412 (2013.01); G06F 3/044 (2013.01); H10K 59/12 (2023.02);
Abstract

A display device comprises an active layer on a substrate, a first metal layer above the active layer, a second metal layer above the first metal layer, a first transistor comprising a semiconductor region in the active layer, a drain electrode on a first side of the semiconductor region, a source electrode on a second side opposite the first side of the semiconductor region, and a gate electrode in the second metal layer, a first capacitor comprising a first capacitor electrode in the first metal layer and electrically connected to the gate electrode of the first transistor, a second capacitor comprising a second capacitor electrode in the first metal layer and electrically connected to a driving voltage line supplying a driving voltage, and a shielding electrode in the second metal layer and overlapping with the first capacitor electrode, the second capacitor electrode, and the drain electrode of the first transistor.


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