The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Sep. 27, 2023
Dynamic random-access memory (dram) efficiency calculation and utilization of last level cache (llc)
Qualcomm Incorporated, San Diego, CA (US);
Shriharsha Chebbi, Hyderabad, IN;
Nirav Narendra Desai, Hyderabad, IN;
Badrinath Dorairajan, Bangalore, IN;
Lakshmi Narayana Panuku, Hyderabad, IN;
Qualcomm Incorporated, San Diego, CA (US);
Abstract
Various embodiments include systems and methods for improving Dynamic Random-Access Memory (DRAM) efficiency and Last Level Cache (LLC) utilization. A computing system may be configured to dynamically adjust DRAM efficiency calculations based on multiple system metrics and conditions (e.g., DDR frequency, density, refresh rates, etc.) for more accurate frequency settings and improved power consumption. The computing system may use a multi-stage approach that includes memory and cache allocation, bandwidth management, and frequency settings. The computing system may fine-tune the DRAM efficiency calculations based on various other factors (e.g., cache miss rates, power consumption, etc.), dynamically modify operational parameters (e.g., DDR frequencies, etc.) in response to specific events or computational tasks, and work in tandem with other system components (e.g., a Last-Level Cache Controller (LLCC), etc.) to improve resource allocation.