The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Aug. 07, 2025
Applicant:

Lx Semicon Co., Ltd., Daejeon, KR;

Inventors:

Deog Soo Kim, Daejeon, KR;

Tae Ryong Kim, Daejeon, KR;

Myoung Ho Lee, Daejeon, KR;

You Suk Kim, Daejeon, KR;

Assignee:

LX SEMICON CO., LTD., Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 25/07 (2006.01); H02M 7/00 (2006.01); H05K 1/14 (2006.01); H05K 1/181 (2026.01);
U.S. Cl.
CPC ...
H01L 23/49562 (2013.01); H01L 25/072 (2013.01); H02M 7/003 (2013.01); H05K 1/145 (2013.01); H05K 1/181 (2013.01); H05K 2201/042 (2013.01);
Abstract

A power semiconductor module may comprise a common drain pad, a first power semiconductor device on a first region of the common drain pad, a second power semiconductor device on a second region of the common drain pad, a molding layer surrounding lateral parts of the first power semiconductor device and the second power semiconductor device on a peripheral region of the common drain pad, a common gate pad on the first power semiconductor device and the second power semiconductor device, and a source pad on the first power semiconductor device and the second power semiconductor device. The source pad may surround at least two outer lateral parts of the common gate pad.


Find Patent Forward Citations

Loading…