The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Sep. 16, 2022
International Business Machines Corporation, Armonk, NY (US);
Nicholas Anthony Lanzillo, Wynantskill, NY (US);
Reinaldo Vega, Mahopac, NY (US);
Takashi Ando, Eastchester, NY (US);
David Wolpert, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device including an interleaved/nested structure of subtractive interconnects and damascene interconnects. The semiconductor device includes a subtractive-etched interconnect wiring level having subtractive interconnects and a damascene interconnect wiring level having damascene interconnects. The subtractive-etched interconnect wiring level includes first electrodes that have a first potential second electrodes that have a second potential different from the first potential, with the second electrodes generated to interleave the first electrodes. The semiconductor also includes a damascene interconnect wiring level that includes other first electrodes having the first potential, and other second electrodes having the second potential. In the damascene interconnect wiring level, the other second electrodes are also interleaved by the other first electrodes.