The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Jul. 07, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jihoon Chang, Yongin-si, KR;
Sooho Shin, Hwaseong-si, KR;
Dongwan Kim, Hwaseong-si, KR;
Dongsik Park, Suwon-si, KR;
Chansic Yoon, Anyang-si, KR;
Hyeonwoo Jang, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device including a substrate including a trench; an isolation structure including an inner wall oxide layer pattern, a liner pattern, and a filling insulation pattern stacked in the trench; and a gate structure on the substrate and the isolation structure, wherein the inner wall oxide layer pattern and the liner pattern are conformally formed on a surface of the trench, a top surface of the inner wall oxide layer pattern is lower than an upper surface of the substrate, and a boundary between an upper surface of the inner wall oxide layer pattern and an upper surface of the liner pattern has no step difference.