The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Aug. 06, 2021
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Yoshihiro Komatsu, Ebina, JP;
Toshikazu Ohno, Atsugi, JP;
Yuichi Yanagisawa, Atsugi, JP;
Shinya Sasagawa, Chigasaki, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02181 (2013.01); C23C 16/405 (2013.01); C23C 16/45529 (2013.01); C23C 16/56 (2013.01); H01L 21/02205 (2013.01); H01L 21/0228 (2013.01);
Abstract
A semiconductor device in which variation in electrical characteristics is small is provided. A first insulator is deposited, a metal oxide is device over the first insulator, a second insulator is device over the metal oxide, an oxide film is device over the second insulator, and heat treatment is performed, whereby hydrogen in the first insulator, the second insulator, and the oxide is transferred and absorbed into the metal oxide. The metal oxide is formed by an ALD method.