The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Mar. 25, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Junho Jeong, Hwaseong-si, KR;
Joonmyoung Lee, Gwacheon-si, KR;
Whankyun Kim, Seoul, KR;
Eunsun Noh, Yongin-si, KR;
Jeongheon Park, Hwaseong-si, KR;
Wanjin Chung, Yongin-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 11/161 (2013.01); H01F 10/3286 (2013.01); H10B 61/22 (2023.02); H10N 50/85 (2023.02); G11C 11/1659 (2013.01);
Abstract
Provided is a magnetic memory device. The magnetic memory device may include a magnetic tunnel junction. The magnetic tunnel junction may include a fixed layer, a tunnel barrier layer on the fixed layer, a free layer on the tunnel barrier layer, a protection layer above the free layer, the protection layer comprising an amorphous metal boride, and a capping layer on the protection layer, the capping layer comprising a metal or a metal nitride.