The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Aug. 21, 2019
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Wonjae Chang, Seoul, KR;

Jisoo Ko, Seoul, KR;

Hyeyoung Yang, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/831 (2025.01); H01L 23/00 (2006.01); H01L 25/075 (2006.01); H10H 20/01 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8314 (2025.01); H01L 24/95 (2013.01); H01L 25/0753 (2013.01); H10H 20/01335 (2025.01); H10H 20/857 (2025.01); H01L 24/20 (2013.01); H01L 24/29 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 2224/2105 (2013.01); H01L 2224/29006 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/83201 (2013.01); H01L 2224/95133 (2013.01); H01L 2224/95136 (2013.01); H10H 20/018 (2025.01); H10H 20/032 (2025.01); H10H 20/0364 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01);
Abstract

Provided in the present specification is a novel structured semiconductor light-emitting element capable of preventing an electrode forming failure due to an arrangement error occurring during assembly or transfer of semiconductor light-emitting elements on a substrate, when a display device is implemented using the semiconductor light-emitting elements, wherein at least one of a plurality of semiconductor light-emitting elements according to one embodiment of the present disclosure comprises: a first conductive type semiconductor layer; a second conductive type semiconductor layer located on the first conductive type semiconductor layer; an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a second conductive type electrode located on the second conductive type semiconductor layer; and a first conductive type electrode located on at least a one-side stepped portion of the first conductive type semiconductor layer exposed by etching a portion of the second conductive type semiconductor layer and the active layer.


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