The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Jun. 21, 2022
Purdue Research Foundation, West Lafayette, IN (US);
Xiaohui Xu, Lafayette, IN (US);
Zachariah Olson Martin, West Lafayette, IN (US);
Demid Sychev, West Lafayette, IN (US);
Alexei S. Lagutchev, West Lafayette, IN (US);
Yong Chen, West Lafayette, IN (US);
Vladimir Michael Shalaev, West Lafayette, IN (US);
Alexandra Boltasseva, West Lafayette, IN (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
Methods of fabricating single photon emitters (SPEs) including nanoindentation of hexagonal boron nitride (hBN) host materials and annealing thereof, devices formed from such methods, and chips with a single photon emitter. A substrate with a layer of hBN is provided. Nanoindentation is performed on the layer of hBN to produce an array of sub-micron indentations in the layer of hBN. The layer of hBN is annealed to activate SPEs near the indentations. Devices include a substrate with an SPE produced in accordance with the methods. Chips include a substrate, an hBN layer, and an SPE including an indentation on the hBN layer, in which the substrate is not damaged at the indentation.