The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Jul. 17, 2020
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventor:

Alexander Tonkikh, Wenzenbach, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/811 (2025.01); H10H 20/815 (2025.01); H10H 20/824 (2025.01);
U.S. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/8242 (2025.01); H10H 20/811 (2025.01); H10H 20/815 (2025.01); H10H 20/824 (2025.01);
Abstract

In one embodiment, the invention relates to an optoelectronic semiconductor chip comprising a semiconductor layer sequence. The semiconductor layer sequence has an n-conducting first layer region, a p-conducting second layer region and an active zone lying therebetween for generating radiation. The second layer region comprises a first subregion directly adjacent to the active zone, the first subregion being composed of p-conducting InvAl1-vP. The second layer region also comprises a second subregion directly adjacent to the first subregion, the second subregion having p-conducting Iny(GaxAl1-x)1-yP. The second layer region also comprises a third subregion as a p-contact layer directly adjacent to the second subregion.


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