The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Jun. 13, 2022
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventor:

René Escoffier, Grenoble, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/80 (2025.01); H10D 8/01 (2025.01); H10D 8/60 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H10D 84/811 (2025.01); H10D 8/051 (2025.01); H10D 8/60 (2025.01); H10D 62/106 (2025.01); H10D 62/136 (2025.01);
Abstract

A switching circuit forming a bidirectional switch between a first node and a second node and resting on a substrate includes a first branch with a first diode in series with a first heterojunction field-effect transistor, and a second branch with a second heterojunction field-effect transistor in series with a second diode, the first branch and the second branch being mounted in parallel to one another and so that the first diode and the second diode are arranged in antiparallel or in anti-series with respect to one another. The first transistor and the second transistor are each provided with a control gate facing a heterojunction band forming an active zone in which an electron gas is capable of being formed. The first diode is a Schottky diode with a metal electrode in contact with the heterojunction band, and the second diode is a Schottky diode with a metal electrode in contact with the heterojunction band. The first diode, the first transistor, the second diode, and the second transistor share the same active zone.


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