The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Jun. 12, 2023
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventor:
Jong Ho Lee, Incheon, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 1/47 (2025.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 64/111 (2025.01); H10D 1/47 (2025.01); H10D 30/0281 (2025.01); H10D 30/65 (2025.01); H10D 62/102 (2025.01);
Abstract
Disclosed are a high voltage semiconductor device and a method of manufacturing the same. More particularly, a high voltage semiconductor device and a method of manufacturing the same include a metal field plate, which may be manufactured substantially simultaneously with a thin film resistor (TFR) (e.g., in the same process step[s] or sequence), between a source metal and a gate electrode.
Lee, Jong. (2026). High voltage semiconductor device and method of manufacturing same (U.S. Patent No. 12575159). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12575159
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile