The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Oct. 19, 2022
Applicant:
Denso Corporation, Kariya-city, JP;
Inventor:
Kenji Kouno, Kariya-city, JP;
Assignee:
DENSO CORPORATION, Kariya-city, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/17 (2025.01); H02M 1/08 (2006.01); H03K 17/687 (2006.01); H10D 30/66 (2025.01); H10D 30/83 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 84/80 (2025.01); H02P 27/06 (2006.01);
U.S. Cl.
CPC ...
H10D 62/328 (2025.01); H02M 1/08 (2013.01); H03K 17/6871 (2013.01); H10D 30/665 (2025.01); H10D 30/668 (2025.01); H10D 30/831 (2025.01); H10D 62/107 (2025.01); H10D 62/8325 (2025.01); H10D 84/811 (2025.01); H02P 27/06 (2013.01);
Abstract
A semiconductor device includes a junction field effect transistor (JFET) including a source electrode, a drain electrode, and a gate electrode, and a metal oxide semiconductor field effect transistor (MOSFET) including a source electrode, a drain electrode, and a gate electrode. The JFET and the MOSFET are cascode-connected such that the source electrode of the JFET and the drain electrode of the MOSFET are electrically connected. A gate voltage dependency of the JFET or a capacitance ratio of a mirror capacitance of the MOSFET to an input capacitance of the MOSFET is adjusted in a predetermined range.