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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12575142 B1

PDFFull Text
Date of Patent:
Mar. 10, 2026

Filed:

Dec. 06, 2022

Semiconductor device including element isolation insulating film having thermal oxide film

Applicant:

Denso Corporation, Kariya-city, JP;

Inventors:

Syogo Ikeura, Kariya-city, JP;

Takashi Nakano, Kariya-city, JP;

Assignee:

DENSO CORPORATION, Kariya-city, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Norman D Richards

Assistant Examiner:

Sammantha K Salaz

Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/762 (2006.01); H10D 10/01 (2025.01); H10D 10/60 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 62/115 (2025.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 21/266 (2013.01); H01L 21/76283 (2013.01); H10D 10/061 (2025.01); H10D 10/60 (2025.01); H10D 64/111 (2025.01);
Abstract

A semiconductor device includes a semiconductor substrate, a base region, an emitter region, a collector region, and an element isolation insulating film. The semiconductor substrate has a main surface. The base region has a first conductivity type and is disposed in a surface layer of the semiconductor substrate that is close to the main surface. The emitter region has a second conductivity type and is disposed in a surface layer of the base region. The collector region has the second conductivity type and is disposed at a portion in the surface layer of the semiconductor substrate apart from the emitter region. The element isolation insulating film is disposed on the main surface, and has a thermal oxide film being in contact with a junction interface between the base region and the emitter region.

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Ikeura, Syogo. (2026). Semiconductor device including element isolation insulating film having thermal oxide film (U.S. Patent No. 12575142). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12575142

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