Semiconductor device

Abstract

A novel semiconductor device is provided. The semiconductor device is a single-polarity semiconductor device including a vertical-channel transistor. In the vertical-channel transistor, the higher parasitic capacitance value of the gate-source parasitic capacitance and the gate-drain parasitic capacitance is used as a bootstrap capacitor, which decreases the occupied area of the semiconductor device. The use of an oxide semiconductor for a semiconductor layer of the vertical-channel transistor increases the breakdown voltage between the source and the drain, which can shorten the channel length. In addition, stable operation can be performed even in a high-temperature environment.