The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Jul. 18, 2022
Applicant:
San Jose State University Research Foundation, San Jose, CA (US);
Inventor:
Hiu Yung Wong, Cupertino, CA (US);
Assignee:
San Jose State University Research Foundation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6219 (2025.01); H10D 30/6211 (2025.01);
Abstract
A vertical semiconductor transistor is provided that includes: a source region, a drain region, and a body region formed in a semiconductor substrate; wherein the source region and the drain region are doped with a first type dopant; wherein the body region is doped with a second type dopant; and wherein the second type dopant has a doping profile within the body region that varies with distance from the source region.