The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Jan. 19, 2022
Applicant:

Peiching Ling, San Jose, CA (US);

Inventors:

Peiching Ling, San Jose, CA (US);

Nanray Wu, Fremont, CA (US);

Assignee:

[object Object];

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10B 61/10 (2023.02);
Abstract

A non-volatile memory device includes: an insulation layer; a PN diode, which is formed in a monocrystalline silicon layer, a monocrystalline germanium layer or a monocrystalline gallium arsenide layer on the insulation layer; a writing wire which is conductive and is electrically connected to the anode end of the PN diode; a memory unit on the PN diode, the memory unit being electrically connected to a cathode end of the PN diode; and a selection wire on the memory unit, the selection wire being electrically connected to the memory unit; wherein when the non-volatile memory device is selected for a data to be written into, a first current flows through the PN diode to write the data into the memory unit.


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