The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Sep. 01, 2022
Kioxia Corporation, Minato-Ku, JP;
Mutsumi Okajima, Yokkaichi Mie, JP;
Nobuyoshi Saito, Ota Tokyo, JP;
Keiji Ikeda, Kawasaki Kanagawa, JP;
Kotaro Noda, Yokkaichi Mie, JP;
Takanori Akita, Yokkaichi Mie, JP;
KIOXIA CORPORATION, Minato-Ku, JP;
Abstract
A semiconductor device includes: an oxide semiconductor layer extending in a first direction; a gate electrode overlapping the oxide semiconductor layer in a second direction intersecting the first direction; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; a first conductive layer provided on the oxide semiconductor layer in the first direction and containing a conductive oxide; a second conductive layer provided on the first conductive layer in the first direction and containing a metal element; a first protective film in contact with a side surface of the second conductive layer; and a second protective film in contact with at least a part of a side surface or an upper surface of the first conductive layer. The first protective film and the second protective film each contain a material having an oxygen diffusion coefficient smaller than that of the second conductive layer.