The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Apr. 06, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Sanghoon Uhm, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/482 (2023.02);
Abstract

A semiconductor device includes bit lines, gate electrodes, a gate insulation pattern, a channel structure, a metal oxide pattern and a metal pattern on a substrate. The bit lines extend in a first direction and are spaced apart from each other in a second direction. The gate electrodes are disposed on the bit lines, spaced apart from each other in the first direction, and extend in the second direction. The gate insulation pattern is formed on a sidewall in the first direction of the gate electrodes. The channel structure is formed on a sidewall in the first direction of the gate insulation pattern. The metal oxide pattern is formed on a sidewall in the first direction of the channel structure. The metal pattern is formed on a sidewall in the first direction of the metal oxide pattern.


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