The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
May. 23, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyebin Choi, Hwaseong-si, KR;
Chansic Yoon, Anyang-si, KR;
Gyuhyun Kil, Hwaseong-si, KR;
Doosan Back, Seoul, KR;
Hyungki Cho, Seoul, KR;
Junghoon Han, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device including a gate structure on a substrate, a first gate spacer, and a second gate spacer may be provided. A sidewall of the gate structure includes a concave lower sidewall portion and an upper sidewall portion that is vertical with respect to an upper surface of the substrate. The first gate spacer is formed on the upper sidewall portion of the sidewall of the gate structure. The second gate spacer is formed on the concave lower sidewall portion of the sidewall of the gate structure and an outer sidewall of the first gate spacer. The second gate spacer contacts a lower surface of the first gate spacer and includes nitride.