The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Feb. 24, 2022
Applicant:

Hitachi Astemo, Ltd., Hitachinaka, JP;

Inventors:

Hiroshi Suzuki, Tokyo, JP;

Shinichirou Wada, Tokyo, JP;

Masahiro Doi, Hitachinaka, JP;

Yoshiaki Mizuhashi, Hitachinaka, JP;

Assignee:

HITACHI ASTEMO, LTD., Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H03K 17/16 (2006.01); H02P 27/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/165 (2013.01); H02M 1/08 (2013.01); H03K 17/161 (2013.01); H02P 27/06 (2013.01);
Abstract

A drive device for a voltage-driven semiconductor switching element includes: a gate drive circuit configured to drive the semiconductor switching element; and a gate voltage hold circuit configured to hold a gate voltage applied to the semiconductor switching element at a predetermined hold voltage higher than a threshold voltage of the semiconductor switching element and lower than a Miller voltage of the semiconductor switching element. The gate voltage hold circuit starts an operation of holding the gate voltage at the hold voltage after a rise of a voltage between main terminals of the semiconductor switching element at a turn-off time of the semiconductor switching element and before a maximum value of the voltage between the main terminals.


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