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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12573995 B1

PDFFull Text
Date of Patent:
Mar. 10, 2026

Filed:

May. 04, 2022

Piezoelectric acoustic resonator with improved tcf manufactured with piezoelectric thin film transfer process

Applicant:

Akoustis Technologies Corp., Huntersville, NC (US);

Inventors:

Dae Ho Kim, Cornelius, NC (US);

Frank Bi, Huntersville, NC (US);

Mary Winters, Webster, NY (US);

Ramakrishna Vetury, Charlotte, NC (US);

Abhay Kochhar, Huntersville, NC (US);

Assignee:

Akoustis Technologies Corp., Huntersville, NC (US);

Attorney:

Polsinelli PC

Primary Examiner:

Thomas Truong

Int. Cl.
CPC ...
H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/54 (2006.01); H10N 30/00 (2023.01); H10N 30/02 (2023.01); H10N 30/06 (2023.01); H10N 30/077 (2023.01); H10N 30/086 (2023.01); H10N 30/87 (2023.01); H10N 30/88 (2023.01);
U.S. Cl.
CPC ...
H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/02118 (2013.01); H03H 9/0523 (2013.01); H03H 9/105 (2013.01); H03H 9/13 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/177 (2013.01); H03H 9/547 (2013.01); H10N 30/02 (2023.02); H10N 30/06 (2023.02); H10N 30/077 (2023.02); H10N 30/086 (2023.02); H10N 30/706 (2024.05); H10N 30/875 (2023.02); H10N 30/877 (2023.02); H10N 30/88 (2023.02); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01); Y10T 29/42 (2015.01);
Abstract

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include temperature compensation layers (TCL) that improve the device TCF. These layers can be thin layers of oxide type materials and can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, between two or more piezoelectric layers, and any combination thereof. In an example, the TCLs can be configured from thick passivation layers overlying the top electrode and/or underlying the bottom electrode.

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