The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Jul. 21, 2021
Applicant:

Nichia Corporation, Anan, JP;

Inventors:

Kenichi Terao, Tokushima, JP;

Hitoshi Takayama, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/0234 (2021.01); H01S 5/024 (2006.01); H01S 5/042 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18308 (2013.01); H01S 5/0421 (2013.01); H01S 5/18341 (2013.01); H01S 5/0234 (2021.01); H01S 5/02469 (2013.01); H01S 5/04253 (2019.08); H01S 5/04256 (2019.08); H01S 5/04257 (2019.08); H01S 5/18305 (2013.01); H01S 5/18347 (2013.01); H01S 5/18369 (2013.01); H01S 5/34333 (2013.01);
Abstract

A vertical cavity surface emitting laser element includes a first light reflecting film, a nitride semiconductor layered body, a p-electrode and a second light reflecting film. The nitride semiconductor layered body includes an n-side semiconductor layer disposed on the first light reflecting film, an active layer disposed on the n-side semiconductor layer, and a p-side semiconductor layer disposed on the active layer. The p-side semiconductor layer includes a protrusion and a surface around the protrusion. The p-electrode is in contact with an upper surface of the protrusion, and extends to the surface around the protrusion. The p-electrode is light-transmissive. The second light reflecting film is disposed on the p-electrode. A height of the protrusion as measured from the surface around the protrusion is smaller than a thickness of the p-electrode.


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Terao, Kenichi. (2026). Vcsel with protrusion having inclined side walls formed in p-side semiconductor layer (U.S. Patent No. 12573818). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12573818

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