The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Aug. 29, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sangjun Lee, Seoul, KR;
Gabjin Nam, Seoul, KR;
Eunha Lee, Seoul, KR;
Hyangsook Lee, Suwon-si, KR;
Bongjin Kuh, Suwon-si, KR;
Junghwa Kim, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H01B 3/10 (2006.01); H01B 3/12 (2006.01); H10D 30/67 (2025.01); H10D 64/68 (2025.01); H10D 30/62 (2025.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
H01B 3/12 (2013.01); H01B 3/10 (2013.01); H10D 1/68 (2025.01); H10D 30/6739 (2025.01); H10D 64/689 (2025.01); H10D 64/691 (2025.01); H10D 30/62 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 30/68 (2025.01);
Abstract
A thin-film structure and a semiconductor device including the same are provided. The thin-film structure includes: a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a <11x> (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).