The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Mar. 02, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Tomoya Sanuki, Yokkaichi Mie, JP;

Keisuke Nakatsuka, Kobe Hyogo, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor storage device has a bit line, a source line, a first memory cell and a second memory cell provided between the bit line and the source line and connected in series, a first word line connected to the first memory cell, a second word line connected to the second memory cell, and a control circuit. The control circuit, when executing a read operation with respect to the first memory cell, supplies a source voltage to the source line, supplies a first voltage to the first word line, and supplies a second voltage to the second word line, and a difference between the source voltage and the second voltage is smaller than a difference between the source voltage and the first voltage.


Find Patent Forward Citations

Loading…