Nonvolatile memory device and method of controlling using time division enable switches

Abstract

The present disclosure provides nonvolatile memory devices including high-voltage switch circuits and methods of controlling the same. In some embodiments, a nonvolatile memory device includes a voltage generator configured to generate a switching source voltage, a plurality of high-voltage switch circuits grouped into a plurality of switching groups and configured to generate a plurality of switch control signals based on the switching source voltage, a conductive path configured to transfer the switching source voltage from the voltage generator to the plurality of high-voltage switch circuits, a plurality of high-voltage switches configured to transfer high voltages based on the plurality of switch control signals, and a control circuit configured to control transition timing of the plurality of switch control signals independently with respect to each of the plurality of switching groups.