The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Oct. 08, 2021
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
In a memory cell including a ferroelectric capacitor, data is read without data destruction. When the reading operation is performed in the memory cell including the ferroelectric capacitor, voltage applied to the counter electrode of the ferroelectric capacitor is gradually increased so as not to cause polarization destruction in the ferroelectric capacitor. A first reading operation from the memory cell is performed by applying a first voltage that does not cause polarization inversion of the ferroelectric layer to the capacitor, a second reading operation from the memory cell is performed by applying a second voltage that does not cause polarization inversion of the ferroelectric layer to the capacitor, and the second voltage is higher than the first voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile