The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Nov. 10, 2022
Applicant:

Ii-vi Delaware, Inc., Wilmington, DE (US);

Inventors:

Christoph M. Greiner, Eugene, OR (US);

Dmitri Iazikov, Eugene, OR (US);

Assignee:

II-VI DELAWARE, INC., Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/004 (2006.01); G03F 7/095 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70158 (2013.01); G03F 7/0041 (2013.01); G03F 7/095 (2013.01); G03F 7/2002 (2013.01);
Abstract

An optical device is fabricated with a higher resolution of features in a patterned lattice. A photoresist is applied to a device layer for the optical device. Several photomasks offset from one another are used in different exposure steps to expose the photoresist with features. The features in each exposure can have different characteristic dimensions, such as different diameters for posts or holes to be produced in the device layer. Once the exposures are complete, the patterned lattice of the features are produced in the device layer. For example, the photoresist is developed, and reactive ion etching is used to produce the features in the device layer.


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