The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

May. 17, 2023
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Gaelle Palmigiani, Grenoble, FR;

François Deneuville, Grenoble, FR;

Olivier Saxod, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 7/481 (2006.01); G01B 11/22 (2006.01); G01S 17/894 (2020.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
G01S 17/894 (2020.01); G01B 11/22 (2013.01); G01S 7/4816 (2013.01); H10F 39/1825 (2025.01); H10F 39/80 (2025.01); H10F 39/802 (2025.01); H10F 39/8033 (2025.01); H10F 39/8037 (2025.01); H10F 39/812 (2025.01); H10F 39/18 (2025.01); H10F 39/807 (2025.01);
Abstract

A plurality of photosites each photosite including: a first photosensitive area formed in the semiconductor substrate that captures light in a first wavelength range; a second photosensitive area formed in the semiconductor substrate vertically in line with the first photosensitive area that captures light in a second wavelength range, different from the first wavelength range; a first area of collection of charges photogenerated in the first and second photosensitive areas, arranged on the side of a surface of the substrate opposite to the first photosensitive area; a first transfer gate vertically extending from the first photosensitive area to said surface, that transfers the charges photogenerated in the first photosensitive area to the second photosensitive area; and a second transfer gate, horizontally extending on said surface vertically in line with the second photosensitive area, that transfers the photogenerated charges from the second photosensitive area to the first charge collection area.


Find Patent Forward Citations

Palmigiani, Gaelle. (2026). Image sensor (U.S. Patent No. 12571918). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12571918

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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