The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Oct. 31, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49816 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 23/49894 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/08 (2013.01); H01L 25/105 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 2224/08235 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/48227 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1094 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/15311 (2013.01);
Abstract
A method of manufacturing a semiconductor package may include providing a semiconductor chip, forming redistribution patterns, which are provided on a top surface of the semiconductor chip and are electrically connected to the semiconductor chip, forming a protection layer to cover top surfaces of the redistribution patterns, forming under-bump protection patterns on the protection layer, and forming under-bump patterns, which are provided on the protection layer and are electrically connected to the redistribution patterns. The under-bump protection patterns may be spaced apart from each other.