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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12568859 B1

PDFFull Text
Date of Patent:
Mar. 03, 2026

Filed:

Jun. 24, 2022

Silicon carbide based integrated passive devices for impedence matching of radio frequency power devices and process of implementing the same

Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Haedong Jang, San Jose, CA (US);

Marvin Marbell, Cary, NC (US);

Jeremy Fisher, Raleigh, NC (US);

Assignee:

MACOM Technology Solutions Holdings, Inc., Lowell, MA (US);

Attorney:

BakerHostetler

Primary Examiner:

Elias Ullah

Int. Cl.
CPC ...
H03F 3/195 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H03F 1/56 (2006.01); H10D 86/85 (2025.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 25/0655 (2013.01); H03F 1/565 (2013.01); H03F 3/195 (2013.01); H10D 86/85 (2025.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1033 (2013.01); H03F 2200/222 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01);
Abstract

An amplifier circuit that includes an RF amplifier; an impedance matching network; a higher order harmonic termination circuit; a fundamental frequency matching circuit; and an integrated passive device (IPD) that includes a silicon carbide (SiC) substrate. The integrated passive device (IPD) includes one or more reactive components of the fundamental frequency matching circuit and one or more reactive components of the higher order harmonic termination circuit.

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