The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

May. 30, 2023
Applicant:

Tencent Technology (Shenzhen) Company Limited, Guangdong, CN;

Inventors:

Dengfeng Li, Shenzhen, CN;

Wenlong Zhang, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76882 (2013.01); H01L 21/7684 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/53285 (2013.01);
Abstract

Disclosed are a silicon wafer and a method for filling a silicon via thereof, and belong to the field of superconducting quantum technologies. The method includes: obtaining a silicon wafer including at least one silicon via; providing a superconducting material on at least one side of the silicon wafer, the at least one side comprising a side where an opening of the silicon via is located; and heating and pressurizing the superconducting material to fill the superconducting material into the silicon via.


Find Patent Forward Citations

Li, Dengfeng. (2026). Silicon wafer and method for filling silicon via thereof (U.S. Patent No. 12568805). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12568805

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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