The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jul. 27, 2023
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Hirotsugu Sugiura, Tama, JP;
Yoshiyuki Kikuchi, Tokyo, JP;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/32 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02323 (2013.01); C23C 16/325 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01); H01J 37/32091 (2013.01); H01J 37/32146 (2013.01); H01J 37/3244 (2013.01); H01L 21/02126 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01J 2237/332 (2013.01); H01L 21/02167 (2013.01);
Abstract
Methods and systems of forming treated silicon-carbon material are disclosed. Exemplary methods include depositing silicon-carbon material onto a surface of the substrate and treating the silicon-carbon material. The step of treating can include a first treatment step followed by a second treatment step, wherein the first treatment step includes providing first reductant gas activated species and the second treatment step includes providing one or more of a first oxidant gas activated species and a second reductant gas activated species.