The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Oct. 26, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Kyle M. Hanson, Kalispell, MT (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/288 (2006.01); C25D 7/12 (2006.01); C25D 17/00 (2006.01); C25D 17/10 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2885 (2013.01); C25D 7/123 (2013.01); C25D 17/007 (2013.01); C25D 17/10 (2013.01); H01L 21/6723 (2013.01); H01L 21/68764 (2013.01); H01L 21/76873 (2013.01);
Abstract

Conditions at the perimeter of the wafer may be characterized and used to adjust current stolen by the weir thief electrodes during a plating process to generate more uniform film thicknesses. An electrode may be positioned in a plating chamber near the periphery of the wafer as the wafer rotates. To characterize the electrical contacts on the seal, a wafer with a seed layer may be loaded into the plating chamber, and a constant current may be driven through the electrode into the conductive layer on the wafer. As an electrical characteristic of this current varies, such as a voltage required to drive a constant current, a mapping characterizing the seal quality or the openings in the mask layer may be generated.


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